深圳市波光电子有限公司

IR英飞凌 IHW20N120R3  IGBT 晶体管  

制造商:Infineon

产品种类:IGBT 晶体管

技术:Si

封装 / 箱体:TO-247-3

安装风格:Through Hole

配置:Single

集电极—发射极电压 VCEO:1200 V

集电极—射极饱和电压:1.48 V

栅极/发射极电压:+/- 20 V

在25 C的连续集电极电流:40 A

Pd-功率耗散:310 W

工作温度:- 40 C

工作温度:+ 175 C

系列:RC

封装:Tube

商标:Infineon Technologies

 集电极连续电流:40 A 

栅极—射极漏泄电流:100 nA 

产品类型:IGBT Transistors 

工厂包装数量:240 

子类别:IGBTs 

商标名:TRENCHSTOP

 零件号别名:IHW20N120R3FKSA1 IHW2N12R3XK SP 

单位重量:6.056 g

IHW20N120R3  IGBT 晶体管  

Features:

•Powerfulmonolithicbodydiodewithlowforwardvoltage

designedforsoftcommutationonly

•TRENCHSTOPTMtechnologyapplicationsoffers:

-verytightparameterdistribution

-highruggedness,temperaturestablebehavior

-lowVCEsat

-easyparallelswitchingcapabilityduetopositive

temperaturecoefficientinVCEsat

•LowEMI

•QualifiedaccordingtoJESD-022fortargetapplications

•Pb-freeleadplating;RoHScompliant

•CompleteproductspectrumandPSpiceModels:

Applications:

•Inductivecooking

•Inverterizedmicrowaveovens

•Resonantconverters

•Softswitchingapplications

IGBT 晶体管